Silicon Carbide (SiC) Power MOSFETs Market Size 2023-2032

The global Silicon Carbide (SiC) Power MOSFETs market was valued at US$ 435.7 million in 2022 and is projected to reach US$ 1251.4 million by 2035, at a CAGR of 16.3% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

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Silicon Carbide (SiC) Power MOSFETs, also known as SiC MOSFETs, are a type of power semiconductor device used for switching and controlling electrical power in various applications. They are an evolution of traditional MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) but are made from silicon carbide instead of silicon, which gives them several advantages in high-power and high-frequency applications.

Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits

Total Market by Segment:

Global Silicon Carbide (SiC) Power MOSFETs Market, by Type, 2018-2023, 2024-2035 ($ Millions) & (K Units)

Global Silicon Carbide (SiC) Power MOSFETs Market Segment Percentages, by Type, 2022 (%)

• Less than 500V

• 500V-1000V

• 1000V-1500V

• Above than 1500V

Further, the report presents profiles of competitors in the market, key players include:

• ROHM

• Wolfspeed

• Mitsubishi Electric

• STMicroelectronics

• InfineonTechnologies

• Littelfuse

• Ascatron

• Fuji Electric Co., Ltd.

• Toshiba

• MicroSemi (Microchip)

• GeneSiC Semiconductor Inc.

• Global Power Technology Co., Ltd., Inc.

• Shenzhen BASiC Semiconductor LTD.

• InventChip Technology Co., Ltd.

• ON Semiconductor

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